dimensions in inches and (millimeters) version: a06 hs3ab - hs3mb 3.0 amps. high efficient surface mount rectifiers smb/do-214aa .083(2.10) .077(1.95) .012(.31) .006(.15) .012(.31) .006(.15) .008(.20) .004(.10) .056(1.41) .035(0.90) .147(3.73) .137(3.48) .187(4.75) .167(4.25) .103(2.61) .078(1.99) .209(5.30) .201(5.10) features glass passivated junction chip. for surface mounted application low forward voltage drop low profile package built-in stain relief, ideal for automatic placement fast switching for high efficiency high temperature soldering: 260 o c/10 seconds at terminals plastic material used carries underwriters laboratory classification 94v0 mechanical data cases: molded plastic terminals: pure tin plated, lead free polarity: indicated by cathode band packing: 16mm tape per eia std rs-481 weight: 0.21 gram maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol hs 3ab hs 3bb hs 3db hs 3fb hs 3gb hs 3jb hs 3kb hs 3mb units maximum recurrent peak reverse voltage v rrm 50 100 200 300 400 600 800 1000 v maximum rms voltage v rms 35 70 140 210 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 300 400 600 800 1000 v maximum average forward rectified current see fig. 1 i (av) 3.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a maximum instantaneous forward voltage @ 3.0a v f 1.0 1.3 1.7 v maximum dc reverse current @ t a =25 o c at rated dc blocking voltage @ t a =125 o c i r 10 250 ua ua maximum reverse recovery time ( note 1 ) trr 50 75 ns typical junction capacitance ( note 2 ) cj 80 50 pf operating temperature range t j -55 to +150 o c storage temperature range t stg -55 to +150 o c notes: 1. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 2. measured at 1 mhz and applied v r =4.0 volts. 3. measured on p.c.board with 0.6? x 0 .6? (16mm x 16mm) copper pad area.
fig.6 - revers e recove r y tim e characteristi c an d tes t circui t diagram 50w noninductive 1w non inductive oscilloscope (not e 1) pulse gener a t or (not e 2) dut (+) 50vdc (approx) (-) notes : 1 . ris e t ime=7n s max . inpu t impedance= 1 megoh m 22pf 2 . ris e t ime=10n s max . sours e impedance= 5 0 ohms (-) (+) 10w noninductive -1.0a -0.25a 0 +0.5a trr 1cm set time base for 5/ 10ns/ cm ratings and characteristic curves (hs3ab thru hs3mb) fig.3- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 10 100 1000 0 100 300 200 number of cycles at 60hz fig.4- typical junction capacitance junction cap acitance.(pf) 0.1 0.5 15 2 10 20 50 100 200 500 1000 25 50 75 100 125 150 175 reverse voltage. (v) hs3ab-hs3gb hs3jb-hs3mb 0 fig.2- typical reverse characteristics 20 40 60 80 100 120 0.1 1 10 100 1000 percent of rated peak reverse voltage. (%) tj=25 c 0 tj=125 c 0 instantaneous reverse current .( a) 0 140 version: a06 fig.1- maximum forward current derating curve average for ward current .(a) 0 25 50 100 150 175 125 75 0 0.5 1.5 2.0 3.0 2.5 1.0 ambient temperature. ( c) o fig.5- typical instantaneous forward characteristics instantaneous for ward current . (a) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 100 10 1 0.1 0.01 forward voltage. (v) 0 1.6 1.8 hs3 gb hs3jb-hs3mb hs3ab-hs3fb
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